Characterization of a Superconducting Microstrip Single-Photon Detector Shunted with an External Resistor

A superconducting microstrip single-photon detector (SMSPD) generally requires a shunt resistor to avoid latching, caused by its high current-carrying capacity and low kinetic inductance. Here, the effect of the shunt resistor on the behaviors of microbridge SMSPDs was investigated. We analyzed the change in equivalent switching current at different shunt resistances in two ways and determined the operating current range using intrinsic dark count rate (iDCR) curves. We observed that the reduction in shunt resistance can increase the operating current range, which helps to improve the internal detection efficiency (IDE) and reduce the iDCR. However, the reduction in the shunt resistance can reduce the pulse amplitude and increase the pulse decay time, which can degrade the timing jitter and count rate performance of the SMSPD. The trends of the experimental results can be qualitatively reproduced using a circuit model for an SMSPD with a shunt resistor, which provides useful information for the selection of shunt resistors. Furthermore, we report the improved detection performance of a helium-ion-irradiated SMSPD shunted with a small resistance of 5.2 Ω. We observed a weak IDE saturation with a bias current at a wavelength up to 2000 nm and a nonlinear relation between detection current and photon energy.