Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
/ Authors
Yi-Yu Zhang, D. Venkatakrishnarao, M. Bosman, W. Fu, Sarthak Das, F. Bussolotti, Rain Lee, S. L. Teo, Ding Huang, I. Verzhbitskiy
and 9 more authors
Zhuojun Jiang, Zhuolin Jiang, J. Chai, S. Tong, Z. Ooi, C. P. Y. Wong, Y. Ang, K. Goh, C. Lau
/ Abstract
of liquid metal printing. We demonstrate atomic layer deposition compatibility with high- k Ga 2 O 3 /HfO 2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS 2 , achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.