Radiation hardness study using SiPMs with single-cell readout

/ Authors

O. Bychkova, P. Parygin, E. Garutti, A. Kaminsky, S. Martens, E. Popova, J. Schwandt, A. Stifutkin

/ Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Φ = 5e13 cm−2. The cell has a pitch of 15 μm. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of Vo f f by ≈0.5 V is observed after Φ = 5e13 cm−2.

Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

DOI: 10.1016/j.nima.2022.166533