Radiation-hardened and Repairable MoS$_2$ Field Effect Devices with Polymer Solid Electrolyte Gates

Radiation-hardened and Repairable MoS2 Field Effect Devices with Polymer Solid Electrolyte Gates Di Chen, Jiankun Li, Zheng Wei, Xinjian Wei, Maguang Zhu, Jing Liu, Guangyu Zhang, Zhiyong Zhang, and Jian-Hao Chen* Dr. D. Chen, Dr. X.-J. Wei, Prof. J.-H. Chen International Center of Quantum Material, School of Physics, Peking University, Beijing 100871, China E-mail: chenjianhao@pku.edu.cn Dr. D. Chen, Dr. J. K. Li, Dr. X.-J. Wei, Dr. J. Liu, Prof. J.-H. Chen Beijing Academy of Quantum Information Sciences, Beijing 100193, China Z. Wei, Prof. G. Y. Zhang Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Dr. M. Zhu, Prof. Z. Zhang, Prof. J.-H. Chen Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China Prof. J.-H. Chen Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing