Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band

M. Gawełczyk,1, 2, ∗ P. Wyborski,2 P. Podemski,2 J. P. Reithmaier,3 S. Höfling,4, 5 and G. Sęk2 1Department of Theoretical Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, 50-370 Wrocław, Poland 2Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, 50-370 Wrocław, Poland 3Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany 4Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany 5SUPA, School of Physics and Astronomy, University of St.Andrews, North Haugh, KY16 9SS St. Andrews, United Kingdom