Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders
/ Authors
/ Abstract
Regina Ariskina ,1 Michael Schnedler ,2,* Pablo D. Esquinazi ,1,† Ana Champi ,3 Markus Stiller,1 Wolfram Hergert ,4 R. E. Dunin-Borkowski,2 Philipp Ebert,2 Tom Venus,5 and Irina Estrela-Lopis5 1Division of Superconductivity and Magnetism, Felix-Bloch Institute for Solid State Physics, University of Leipzig, D-04103 Leipzig, Germany 2Peter Gruenberg Institut, Forschungszentrum Juelich, D-52425 Juelich, Germany 3Centro de Ciencias Naturais e Humanas, Universidade Federal do ABS, Santo Andre, 09210-580 SP, Brazil 4Institute of Physics, Martin Luther University Halle-Wittenberg. D-06120 Halle, Germany 5Institute of Medical Physics and Biophysics, University of Leipzig, D-04107 Leipzig, Germany