Numerical approaches for calculating the low-field dc Hall coefficient of the doped Hubbard model
/ Authors
/ Abstract
Wen O. Wang, ∗ Jixun K. Ding, Brian Moritz, Yoni Schattner, 2 Edwin W. Huang, and Thomas P. Devereaux 5, † Department of Applied Physics, Stanford University, CA 94305, USA Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA Department of Physics, Stanford University, Stanford, CA 94305, USA Department of Physics and Institute of Condensed Matter Theory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA (Dated: March 10, 2021)
Journal: Physical Review Research