Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate erbium monobismuthide

Rare-earth monopnictides display rich physical behaviors, featuring most notably spin and orbital orders in their ground state. Here, we grow ErBi single crystal and study its magnetic, thermal, and electrical properties. An analysis of the magnetic entropy and magnetization indicates that the weak magnetic anisotropy in ErBi possibly derives from the mixing effect, namely the anisotropic ground state of $\mathrm{E}{\mathrm{r}}^{3+}(4{f}^{11})$ mingles with the isotropic excited state through exchange interaction. At low temperature, an extremely large magnetoresistance $(\ensuremath{\sim}{10}^{4}%)$ with a parabolic magnetic-field dependence is observed, which can be ascribed to the nearly perfect electron-hole compensation and ultrahigh carrier mobility. When the magnetic field is rotated in the $ab$ $(ac)$ plane and the current flows in the $b$ axis, the angular magnetoresistance in ErBi shows a twofold (fourfold) symmetry. Similar case has been observed in LaBi where the anisotropic Fermi surface dominates the low-temperature transport. Our theoretical calculation suggests that near the Fermi level ErBi shares similarity with LaBi in the electronic band structures. These findings indicate that the angular magnetoresistance of ErBi could be mainly determined by its anisotropic Fermi surface topology. Besides, contributions from several other possibilities, including the spin-dependent scattering, spin-orbit scattering, and demagnetization correlation to the angular magnetoresistance of ErBi are also discussed.