Influence of Polymorphism on the Electronic Structure of Ga2O3
/ Authors
J. Swallow, C. Vorwerk, P. Mazzolini, P. Vogt, O. Bierwagen, A. Karg, M. Eickhoff, J. Schormann, M. R. Wagner, J. Roberts
and 14 more authors
P. Chalker, Matthew J. Smiles, P. Murgatroyd, S. Razek, Zachary W. Lebens-Higgins, L. Piper, L. Jones, P. Thakur, Tien-Lin Lee, J. Varley, J. Furthmuller, C. Draxl, T. Veal, A. Regoutz
/ Abstract
The search for new wide-band-gap materials is intensifying to satisfy the need for more advanced and energy-efficient power electronic devices. Ga2O3 has emerged as an alternative to SiC and GaN, s...
Journal: Chemistry of Materials