Large-Area Electrodeposition of Ultra-Thin MoS2 on Graphene for 2D Material Heterostructure Photodetectors

Heterostructures involving transition metal dichalcogenides and other two-dimensional materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of such technologies. For the first time, we demonstrate the growth of films as thin as a bilayer MoS2 on monolayer graphene via non-aqueous electrodeposition. Through methods such as scanning electron microscopy, atomic force microscopy, Raman spectroscopy, energy and wavelength dispersive X-ray spectroscopies and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures through demonstrating the operation of the structure as a prototype photodetector. These results pave the way towards developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications.