Directly visualizing the momentum-forbidden dark excitons and their dynamics in atomically thin semiconductors

Probing the dark state Excitons, electron-hole pairs held together by Coulomb attraction, can be generated in semiconductors under excitation and greatly influence the material's optoelectronic properties. Although bright excitons are optically active, their dark-state cousins have been more difficult to detect. They do, however, affect the optoelectronic properties through their interaction with light and bright excitons. Madéo et al. developed a pump-probe photoemission technique that is used reveal the spatial, temporal, and spectral dynamics of excitons (see the Perspective by Na and Ye). Demonstrated in two-dimensional monolayer films of tungsten diselenide, the technique could also be applicable to other semiconductor systems hosting excitonic excitations. Science, this issue p. 1199; see also p. 1166 A technique is developed to probe the spectral and temporal dynamics of excitons in 2D monolayer materials. Resolving momentum degrees of freedom of excitons, which are electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained an elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum-forbidden dark excitons, which critically affect proposed opto-electronic technologies but are not directly accessible using optical techniques. Here, we probed the momentum state of excitons in a tungsten diselenide monolayer by photoemitting their constituent electrons and resolving them in time, momentum, and energy. We obtained a direct visual of the momentum-forbidden dark excitons and studied their properties, including their near degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominated the excited-state distribution, a surprising finding that highlights their importance in atomically thin semiconductors.