Landau level spectroscopy of Bi2Te3
/ Authors
I. Mohelský, I. Mohelský, A. Dubroka, J. Wyzula, A. Slobodeniuk, A. Slobodeniuk, G. Martínez, Y. Krupko, Y. Krupko, B. Piot
and 6 more authors
O. Caha, J. Humlíček, G. Bauer, G. Springholz, M. Orlita, M. Orlita
/ Abstract
Bismuth telluride is a widely explored material in the condensed matter community and one of the first experimentally identified as a topological insulator. Nevertheless, despite considerable effort, the bulk electronic band structure of Bi${}_{2}$Te${}_{3}$ is known only partially. Here, the authors present a magneto-optical study of Bi${}_{2}$Te${}_{3}$, which provides one with compelling evidence that bismuth telluride is a direct-gap semiconductor, with a multiple valley degeneracy and charge carriers that closely resemble massive Dirac electrons.
Journal: Physical Review B