Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM
physics.app-ph
/ Authors
K. Garello, F. Yasin, H. Hody, S. Couet, L. Souriau, S. H. Sharifi, J. Swerts, R. Carpenter, S. Rao, W. Kim
and 7 more authors
J. Wu, K. K. V. Sethu, M. Pak, N. Jossart, D. Crotti, A. Furnémont, G. S. Kar
/ Abstract
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we show that device performances are similar to our standard SOT-MTJ cells: reliable sub-ns switching with low writing power across the 300mm wafer. Our concept/design opens a new area for MRAM (SOT, STT and VCMA) technology development.