Superconductor to insulator transition in wafer-scale NbSe2

Superconducting tunneling devices, such as Josephson junctions etc., that are made of triplet or topological superconductors may enable new functionalities compared to those conventional ones made of s-wave superconductors. The tunnel barrier, an insulating or normal material layer separating two superconductors, is an important component for the Josephson tunneling devices. Thin layers of NbSe2 have been shown to manifest Ising superconductivity behavior, which can give rise to topological superconductivity driven by large magnetic exchange field. Here we demonstrate the control between superconducting and insulating phases of NbSe2 in epitaxially grown samples with wafer-scale uniformity. We provide the first electrical transport and Raman spectroscopy characterizations of the insulating phase, and show that the energy shift of the Raman modes is closely tied to the phase transition. Our observation paves the way for high quality heterojunction tunnel barriers to be seamlessly built into NbSe2 itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.