Influence of radiation damage on the absorption of near-infrared light in silicon

The absorption length, $λ_{abs}$, of light with wavelengths between 0.95 and 1.30$~μ$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $λ_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $λ_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $λ_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiated silicon strip detectors. Using the measured wavelength dependence of $λ_{abs}$, the change of the silicon band-gap with fluence is determined.