AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device

The KAUST authors acknowledge the financial support from KAUST Baseline BAS/1/1664-01-01, KAUST CRG URF/1/3437-01-01, GCC REP/1/3189-01-01, and National Natural Science Foundation of China (Grant No.61774065). The work at Institute of Semiconductors, Chinese Academy of Sciences was supported by the National Key R&D Program of China (Nos. 2016YFB0400803 and 2016YFB0400802).