Multi-band effects in in-plane resistivity anisotropy of strain-detwinned disordered Ba(Fe1–xRux)2As2

In-plane resistivity anisotropy was measured in strain-detwinned as-grown and partially annealed samples of isovalently-substituted () and the results were contrasted with previous reports on anneal samples with low residual resistivity. In samples with high residual resistivity, detwinned with application of strain, the difference of the two components of in-plane resistivity in the orthorhombic phase, , was found to obey Matthiessen rule irrespective of sample composition, which is in stark contrast with observations on annealed samples. Our findings are consistent with two-band transport model in which contribution from high mobility carriers of small pockets of the Fermi surface has negligible anisotropy of residual resistivity and is eliminated by disorder. Our finding suggests that magnetic/nematic order has dramatically different effect on different parts of the Fermi surface. It predominantly affects inelastic scattering for small pocket high mobility carriers and elastic impurity scattering for larger sheets of the Fermi surface.