Local Strain Heterogeneity Influences the Optoelectronic Properties of Halide Perovskites

Halide perovskites are promising semiconductors for optoelectronics, yet thin films show substantial microscale heterogeneity. Understanding the origins of these variations is essential for mitigating parasitic losses such as non-radiative decay. Here, we probe the structural and chemical origins of the heterogeneity by utilizing scanning X-ray diffraction beamlines at two different synchrotrons combined with high-resolution transmission electron microscopy to spatially characterize the crystallographic properties of individual micrometer-sized perovskite grains in high-quality films. We reveal new levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). By directly correlating these properties with their corresponding local time-resolved photoluminescence properties, we find that regions showing the greatest luminescence losses correspond to strained regions, which arise from enhanced defect concentrations. Our work reveals remarkably complex heterogeneity across multiple length scales, shedding new light on the defect tolerance of perovskites.