Selective Area Grown Semiconductor-Superconductor Hybrids: A Basis for Topological Networks
cond-mat.mes-hall
/ Authors
S. Vaitiekėnas, A. M. Whiticar, M. T. Deng, F. Krizek, J. E. Sestoft, C. J. Palmstrøm, S. Marti-Sanchez, J. Arbiol, P. Krogstrup, L. Casparis
and 1 more author
/ Abstract
We introduce selective area grown hybrid InAs/Al nanowires based on molecular beam epitaxy, allowing arbitrary semiconductor-superconductor networks containing loops and branches. Transport reveals a hard induced gap and unpoisoned 2e-periodic Coulomb blockade, with temperature dependent 1e features in agreement with theory. Coulomb peak spacing in parallel magnetic field displays overshoot, indicating an oscillating discrete near-zero subgap state consistent with device length. Finally, we investigate a loop network, finding strong spin-orbit coupling and a coherence length of several microns. These results demonstrate the potential of this platform for scalable topological networks among other applications.