Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2
cond-mat.mtrl-sci
/ Authors
J. X. Gong, J. Yang, M. Ge, Y. J. Wang, D. D. Liang, L. Luo, X. Yan, W. L. Zhen, S. R. Weng, L. Pi
and 2 more authors
/ Abstract
Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fittings to a two-carrier model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping which not only breaks the balance between electron-type and hole-type carrier densities but also reduces the average carrier mobility. Thus, compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.