Beam test results of a 16 ps timing system based on ultra-fast silicon detectors
/ Authors
N. Cartiglia, A. Staiano, V. Sola, R. Arcidiacono, R. Cirio, F. Cenna, M. Ferrero, V. Monaco, R. Mulargia, M. Obertino
and 33 more authors
F. Ravera, R. Sacchi, A. Bellora, S. Durando, M. Mandurrino, N. Minafra, V. Fadeyev, P. Freeman, Z. Galloway, E. Gkougkousis, H. Grabas, B. Gruey, C. Labitan, R. Losakul, Z. Luce, F. McKinney-Martinez, H. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, N. Woods, A. Zatserklyaniy, G. Pellegrini, S. Hidalgo, M. Carulla, D. Flores, Á. Merlos, D. Quirion, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik
/ Abstract
Abstract In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm 2 . The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
Journal: Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment