Parallel Stitching of Two-Dimensional Materials
cond-mat.mtrl-sci
/ Authors
Xi Ling, Yuxuan Lin, Qiong Ma, Ziqiang Wang, Yi Song, Lili Yu, Shengxi Huang, Wenjing Fang, Xu Zhang, Allen L. Hsu
and 9 more authors
Yaqing Bie, Yi-Hsien Lee, Yimei Zhu, Lijun Wu, Ju Li, Pablo Jarillo-Herrero, Mildred S. Dresselhaus, Tomás Palacios, Jing Kong
/ Abstract
Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.