Cryogenic Silicon Detectors with Implanted Contacts for the Detection of Visible Photons Using the Neganov–Trofimov–Luke Effect

There is a common need in astroparticle experiments such as direct dark matter detection, double-beta decay without emission of neutrinos [$$0 \nu \beta \beta $$0νββ] and coherent neutrino nucleus scattering experiments for light detectors with a very low energy threshold. By employing the Neganov–Trofimov–Luke Effect, the thermal signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures can be amplified by drifting the photogenerated electrons and holes in an electric field. This technology is not used in current experiments, in particular because of a reduction of the signal amplitude with time which is due to trapping of the charges within the absorber. We present here the first results of a novel type of Neganov–Trofimov–Luke Effect light detector with an electric field configuration designed to improve the charge collection within the semiconductor.