Temperature dependent screened electronic transport in gapped graphene

We report our theoretical calculations on the temperature and energy dependent electrical conductivity of gapped graphene within the framework of Boltzmann transport formalism. Since screening effects have known to be of vital importance in explaining the conductivity of gapless graphene therefore we first worked out the behavior of the temperature dependent polarization function for gapped graphene as a function of wave vector and band gap, respectively. Polarization of gapped graphene has been compared with that of gapless graphene, bilayer graphene, and 2DEG to see the effects of gap. It is found that the gapped graphene polarization function exhibits a strong dependence on temperature, wave vector and band gap and the effect translates to the conductivity of gapped graphene. The nature of conductivity in gapped graphene is observed to be non‐monotonic ranging from good to poor to semiconducting. We also find that the conductivity computed as a function of temperature by averaging over quasi‐particle energy significantly differs from that computed at Fermi energy, suggesting that a notable contribution to temperature dependent conductivity is made by electrons close to the Fermi level.