Orbital occupancies and the putative jeff = 1/2 groundstate in Ba2IrO4: a combined oxygen K edge XAS and RIXS study
cond-mat.str-el
/ Authors
M. Moretti Sala, M. Rossi, S. Boseggia, J. Akimitsu, N. B. Brookes, M. Isobe, M. Minola, H. Okabe, H. M. Ronnow, L. Simonelli
and 2 more authors
/ Abstract
The nature of the electronic groundstate of Ba2IrO4 has been addressed using soft X-ray absorption and inelastic scattering techniques in the vicinity of the oxygen K edge. From the polarization and angular dependence of XAS we deduce an approximately equal superposition of xy, yz and zx Ir4+ 5d orbitals. By combining the measured orbital occupancies, with the value of the spin-orbit coupling provided by RIXS, we estimate the crystal field splitting associated with the tetragonal distortion of the IrO6 octahedra to be small, Δ=50(50) meV. We thus conclude definitively that Ba2IrO4 is a close realization of a spin-orbit Mott insulator with a jeff = 1/2 groundstate, thereby overcoming ambiguities in this assignment associated with the interpretation of X-ray resonant scattering experiments.