Measurement of filling-factor-dependent magnetophonon resonances in graphene using Raman spectroscopy.
/ Authors
Y. Kim, J. Poumirol, A. Lombardo, N. G. Kalugin, T. Georgiou, Y. Kim, K. Novoselov, A. Ferrari, J. Kono, O. Kashuba
and 2 more authors
/ Abstract
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E(2g) phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
Journal: Physical review letters