A p-type Heusler compound: Growth, structure, and properties of epitaxial thin NiYBi films on MgO(100)
/ Authors
/ Abstract
Epitaxial semiconducting NiYBi thin films were directly prepared on MgO(100) substrates by magnetron sputtering. The intensity ratio of the (200) and (400) diffraction peaks, I(200)/I(400) = 2.93, was close to the theoretical value (3.03). The electronic structure of NiYBi was calculated using wien2k, and a narrow indirect band gap of width of 210 meV was found. The valence band spectra of the films obtained by linear dichroism in hard x-ray photoelectron spectroscopy exhibit clear structures that are in good agreement with the calculated band structure of NiYBi.
Journal: Applied Physics Letters
DOI: 10.1063/1.4764520