Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
/ Authors
M. Borselli, K. Eng, E. Croke, B. Maune, Biqin Huang, R. S. Ross, A. Kiselev, P. Deelman, I. Alvarado-Rodriguez, A. Schmitz
and 5 more authors
/ Abstract
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
Journal: Applied Physics Letters
DOI: 10.1063/1.3623479