Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks
physics.optics
/ Authors
/ Abstract
Simulations of light scattering off an extreme ultraviolet lithography mask with a 2D-periodic absorber pattern are presented. In a detailed convergence study it is shown that accurate results can be attained for relatively large 3D computational domains and in the presence of sidewall-angles and corner-roundings.