Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

/ Authors

J. Wang, I. Cotoros, X. Liu, J. Chovan, J. Furdyna, I. Perakis, D. Division, E. Laboratory, D. Physics, University of Oslo Ion Beam Physics

and 7 more authors

University of Notre Dame Institute of Electronic Structure, Laser, F. F. Research, Technology-Hellas, U. Crete, Heraklion, Greece.

/ Abstract

Author(s): Wang, J.; Cotoros, I.; Chovan, J.; Furdyna, J. K.; Perakis, I. E.; Chemla, D.S. | Abstract: We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.

Journal: arXiv: Materials Science