Precise half-life measurement of the 26Si ground state
/ Authors
I. Matea, J. Souin, J. Souin, J. Äystö, B. Blank, P. Delahaye, V. Elomaa, T. Eronen, J. Giovinazzo, U. Hager
and 12 more authors
J. Hakala, J. Huikari, A. Jokinen, A. Kankainen, I. Moore, J. Pedroza, S. Rahaman, J. Rissanen, J. Ronkainen, A. Saastamoinen, T. Sonoda, C. Weber
/ Abstract
The β-decay half-life of 26Si was measured with a relative precision of 1.4·10−3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision of 3%. The experiment was done at the Accelerator Laboratory of the University of Jyvaskyla where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.
Journal: The European Physical Journal A