Pressure-induced metal–insulator transition in MgV2O4

/ Authors

D. Baldomir, V. Pardo, S. Blanco-Canosa, F. Rivadulla, J. Rivas, A. Piñeiro, J. E. Arias

/ Abstract

Abstract On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal–insulator transition takes place at high pressure (approximately 6 GPa) in MgV 2 O 4 .

Journal: Physica B-condensed Matter

DOI: 10.1016/j.physb.2007.10.208

Pressure-induced metal–insulator transition in MgV2O4

/ Authors

D. Baldomir, V. Pardo, S. Blanco-Canosa, F. Rivadulla, J. Rivas, A. Piñeiro, J. E. Arias

/ Abstract

Abstract On the basis of experimental thermoelectric power results and ab initio calculations, we propose that a metal–insulator transition takes place at high pressure (approximately 6 GPa) in MgV 2 O 4 .

Journal: Physica B-condensed Matter

DOI: 10.1016/j.physb.2007.10.208